Fig. 4From: Accurate extraction of WSe2 FETs parameters by using pulsed I-V method at various temperatures a Transfer curves of multilayer WSe2 FET measured by DC method using the bias scheme shown in Fig. 3a at various temperatures (−30 to 40 °C). b Transfer curves of multilayer WSe2 FET measured by PIV method using the bias scheme shown in Fig. 3b at various temperatures (−30 to 40 °C)Back to article page