- Open Access
Colloidal quantum dot based solar cells: from materials to devices
© Korea Nano Technology Research Society 2017
- Received: 21 June 2017
- Accepted: 28 July 2017
- Published: 7 August 2017
Colloidal quantum dots (CQDs) have attracted attention as a next-generation of photovoltaics (PVs) capable of a tunable band gap and low-cost solution process. Understanding and controlling the surface of CQDs lead to the significant development in the performance of CQD PVs. Here we review recent progress in the realization of low-cost, efficient lead chalcogenide CQD PVs based on the surface investigation of CQDs. We focus on improving the electrical properties and air stability of the CQD achieved by material approaches and growing the power conversion efficiency (PCE) of the CQD PV obtained by structural approaches. Finally, we summarize the manners to improve the PCE of CQD PVs through optical design. The various issues mentioned in this review may provide insight into the commercialization of CQD PVs in the near future.
- Colloidal quantum dots
- Solar cells
- Lead chalcogenides
Colloidal quantum dots (CQDs) are chemically-prepared semiconductor nanocrystals, which have diameter is less than twice the Bohr radius describing the spatial extension of exciton (electron–hole pair) in semiconductors. The CQDs have attracted attention over the past decade due to a solution based synthetic methods , easily tunable optoelectronic properties , and superior processing capabilities for optoelectronic applications . Specifically, lead chalcogenide CQDs are considered as a prominent material for a next-generation photovoltaics (PVs)  owing to their wide tunable bandgaps covering from visible to near-infrared wavelength regime arising from a large Bohr exciton radius and narrow bulk bandgap. Also, the excitons in lead chalcogenide CQDs can be easily separated into electrons and holes because of their high dielectric constant and extinction coefficient. More importantly, because their material properties can be easily controlled using electron density functional design, lead chalcogenide CQDs are expected to exhibit efficient utilization of low-energy and low-intensity photons and efficient collection of high-energy charges, which are difficult to achieve in conventional PVs . In this article, we discuss the current state of high-efficiency CQD PV development.
Currently, most of the high-efficiency CQD PVs use a thin film solar cell structure. For the PbS CQD solar cells, the excitons generated by light are easily separated by the internal field of the diode due to their high dielectric constant, and the separated electrons and holes move in the CQD thin film. Therefore, their electronic properties itself largely influence on the CQD solar cells. Such electronic properties can be controlled by chemically surface treatment. Initially, thin-film CQD PVs used a Schottky diode structure with a metal (Fig. 3b) [13, 17]. However, the QD film thickness cannot be increased, originated by the small built-in potential and narrow space charge region (SCR) in such Schottky junction CQD PVs. In addition, their charge carrier diffusion length is very short (several tens of nanometers) due to many surface trap states. For the high-efficiency CQD PVs, the SCR should be enlarged. To overcome this problem, heterojunction diodes have been fabricated using oxide semiconductors with n-type doping polarity such as ZnO and TiO2 (Fig. 3c) [13, 18].
Finally, a homojunction CQD PV with CQDs of n-type and p-type doping polarities has been successfully developed by stoichiometry control using surface ligands (Fig. 3d). The structure of the homojunction shows a lower efficiency than heterojunction structures. In a heterojunction using oxide semiconductors with relatively large energy bandgaps, such as ZnO and TiO2, the electrons move easily at the interface between the CQD and the oxide semiconductor; however, the holes cannot move across the interface and the recombination of electrons and holes decreases. Therefore, the homojunction CQD PVs show lower PCE than heterojunction ones .
In addition, the electron blocking layer (EBL) at the interface between the CQD thin film and the metal electrode is used in the same principle to prevent recombination by blocking the hole transport at the interface. In this case, EBL prevents the movement of electrons to the metal electrode through the energy band shift of ethanedithiol (EDT)-treated CQD film . Therefore, high-efficiency CQD PVs can be achieved by using an EBL to reduce electron recombination. In this structure, the number of surface defects and the type of ligands vary depending on the acidity of the protonic solvent used in the ligand exchange process. An efficiency higher than 10% has been reported for CQD PVs produced by changing the electrical properties of CQD films with various protic solvents in the ligand exchange process (Fig. 4b) .
The fabrication of CQD PVs is based on the LBL process by employing the above ligand exchange process. This fabrication procedure is time-consuming and the electrical properties of the CQD film are modified by the environment during the ligand exchange process. Therefore, the LBL process reduces the reproducibility of CQD PVs and inhibits their commercialization. To solve this problem, the surface of PbS CQDs has been completely modified with ammonium iodide (NH4I), which has the closest affinity with Pb, to allow the CQDs to be dissolved in N, N-dimethylformamide . Using a technique similar to the above method and considering the dependence of the energy band shift on the ligand, CQDs with a PCE of 11.3% have been obtained (Fig. 4c) . Ligand exchange performed in the liquid phase is more complete than solid ligand exchange because it increases the diffusion length by suppressing surface defects, resulting in increased thickness of the CQD film without reducing the efficiency.
Multiple junctions using CQDs improve the PCE because they provide easier control of the light absorption region of the CQDs, thus adjusting the energy bandgap. Although relatively few studies have been conducted on multi-junction CQD PVs, they have shown a possibility of maximized efficiency. The LBL process is performed to fabricate the conductive CQD film. In this case, because an organic ligand has a specific acidity and LBL process is performed using a polar solvent and a nonpolar solvent alternately, the pre-formed front sub-cell and intermediate recombination layer (RL) is damaged and the efficiency is lowered. Therefore, as shown in Fig. 5b, a CQD PV with a smaller bandgap than that of the organic PV is placed in the front sub-cell, thereby minimizing the reduction in efficiency . In addition, intermediate RLs have been developed that can induce sufficient electron and hole recombination without damage by using the solution process during the formation of the rear sub-cells to minimize the efficiency reduction (Fig. 5c) . However, the current efficiency of multi-junction CQD PVs is lower than that of single-junction CQD PVs; therefore, further research is required to address these problems. One possible solution is to minimize the damage of the front sub-cell by using CQDs in which the ligand is exchanged in the liquid phase mentioned in the previous section.
CQDs have been attracting much attention because they can absorb light above their energy bandgap with a high extinction coefficient and can be processed by using a solution process. Significant progress has been achieved in the development of CQD PVs by understanding their surface characteristics and using surface modification to obtain superior characteristics that distinguish them from general bulk semiconductors. In the future, we aim to address the various issues presented in this article and to commercialize CQD PVs along with the commercialization of CQD display fields.
JS and SJ wrote the manuscript. Both authors read and approved the final manuscript.
The authors declare that they have no competing interests.
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This work was supported by the Global Frontier R&D program of the Center for Multiscale Energy Systems (NRF-2017M3A6A7051087), NRF program (2016R1A2B3014182), the Global R&D program (1415134409) funded by KIAT, and the Basic Research Fund from KIMM.
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