New discoveries of advanced CMOS-compatible hafnia-based ferroelectric devices pave the way for FerroElec-tronics, which uses ferroelectric building blocks embed-ded in future CMOS technology nodes. It will make data-centric edge intelligence (EI) a reality by enabling much-needed improvements in computing capabilities. In this series, we focus on recent breakthroughs in hafnia ferroe-lectric materials and devices to achieve high ferroelec-ticity, functionality, and performance ferroelectrc devices. We discuss epitaxial growth of hafnia ferroelectric mate-rials, high functionality ferroelectric devices, and the morphotropic phase boundary with a high dielectric con-stant. Such contributions will help hafnia-based FerroE-lectronics make the crucial transition from scientific un-derstanding and fundamentals to practical EI technolo-gies.
Sanghun Jeon, Korea Advanced Institute of Science and Technology (KAIST), Korea, email@example.com