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Fluorite Structure Ferroelectric Materials and Devices

New discoveries of advanced CMOS-compatible hafnia-based ferroelectric devices pave the way for FerroElec-tronics, which uses ferroelectric building blocks embed-ded in future CMOS technology nodes. It will make data-centric edge intelligence (EI) a reality by enabling much-needed improvements in computing capabilities. In this series, we focus on recent breakthroughs in hafnia ferroe-lectric materials and devices to achieve high ferroelec-ticity, functionality, and performance ferroelectrc devices. We discuss epitaxial growth of hafnia ferroelectric mate-rials, high functionality ferroelectric devices, and the morphotropic phase boundary with a high dielectric con-stant. Such contributions will help hafnia-based FerroE-lectronics make the crucial transition from scientific un-derstanding and fundamentals to practical EI technolo-gies.

Guest editor:
Sanghun Jeon, Korea Advanced Institute of Science and Technology (KAIST), Korea,

  1. Ferroelectric memory devices are expected for low-power and high-speed memory applications. HfO2-based ferroelectric is attracting attention for its CMOS-compatibility and high scalability. Mesoscopic-scale grain...

    Authors: Masaharu Kobayashi, Jixuan Wu, Yoshiki Sawabe, Saraya Takuya and Toshiro Hiramoto
    Citation: Nano Convergence 2022 9:50

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